Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy
Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy
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DOI：
10.1143/jjap.40.1885
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发表时间：
2001-03-01
期刊：
影响因子：
--
通讯作者：
Yamaguchi, K
中科院分区：
文献类型：
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作者：
Kaizu, T;Yamaguchi, K
在分子束外延(MBE)生长InAs量子点的过程中，我们研究了自限尺寸过程中量子点的形成。尺寸受限的InAs量子点的积累导致了光致发光线宽的窄非均匀展宽和光致发光峰位置的低能量移动。原子力显微镜(AFM)和反射高能电子束衍射(RHEED)观察发现，尺寸受限的InAs点的侧壁上出现了{136}面。结果表明，刻面的形成在自尺寸限制行为中起着重要作用。
In the molecular beam epitaxy (MBE) growth of InAs quantum dots (QDs), we investigated the dot formation via the self size-limiting process. Accumulation of size-limited InAs QDs resulted in narrow inhomogeneous broadening of photoluminescence (PL) linewidth and low energy shift of PL peak position. Atomic force microscopy (AFM) and reflection high-energy electron-beam diffraction (RHEED) observations revealed the appearance of {136} facets on the side wall of size-limited InAs dots. It was proposed that the facet formation played an important role in the self size-limiting behavior.