Oxygen Concentration Dependence in Microwave Plasma‐Enhanced Chemical Vapor Deposition Diamond Growth in the (H, C, O, N) System
Oxygen Concentration Dependence in Microwave Plasma‐Enhanced Chemical Vapor Deposition Diamond Growth in the (H, C, O, N) System
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(H, C, O, N) 系统中微波等离子体增强化学气相沉积钻石生长中氧气浓度的依赖性
DOI：
10.1002/pssa.202100887
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
Chayahara Akiyoshi
中科院分区：
文献类型：
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作者：
Shimaoka Takehiro;Yamada Hideaki;Mokuno Yoshiaki;Chayahara Akiyoshi
研究了氮掺杂单晶金刚石的掺氮量和结晶质量与氧浓度的关系。采用微波等离子体增强化学气相沉积方法在（H， C， O， N）体系中生长氮掺杂金刚石。氮浓度（N/H）和甲烷浓度（CH4/H2）分别固定为100 ppm和4%。氧浓度（O/C）控制在12.5 ~ 50% （O/H = 0.25 ~ 1%）。金刚石的生长速率从38 μm h−1降低到7 μm h−1。外延层中的氮浓度随着氧浓度的增加而增加，当氧/碳>为25%（氧/氢>为0.5%）时氮浓度开始下降。1332处拉曼峰半峰全宽度为2.0 ~ 2.2 cm−1。氧气的引入影响氮在金刚石中的结合。有一个氧浓度的最优值，使氮浓度最高。这是由于氧气的引入提高了气相中氮相关物种的有效浓度，降低了生长速率。结果表明，（H， C， O， N）体系可以比（H， C， N）体系提供更高浓度的氮，而不会降低晶体质量。
The dependence of nitrogen incorporation and crystalline quality of the nitrogen‐doped single‐crystal diamond on oxygen concentration is investigated. Nitrogen‐doped diamond is grown by microwave plasma‐enhanced chemical vapor deposition in the (H, C, O, N) system. Nitrogen concentration (N/H) and methane concentration (CH4/H2) are fixed at 100 ppm and 4%, respectively. Oxygen concentration (O/C) is controlled from 12.5 to 50% (O/H = 0.25–1%). The growth rate of diamond decreases from 38 to 7 μm h−1. The nitrogen concentration in the epitaxial layer increases with increasing oxygen concentration and starts to decrease when O/C > 25% (O/H > 0.5%). The full width at half maximum (FWHM) of the Raman peak at 1332 is 2.0–2.2 cm−1. Introduction of oxygen affects incorporation of nitrogen into diamond. There is an optimum value of oxygen concentration to give the highest nitrogen concentration. This is attributed to the enhancement of the effective concentration of nitrogen‐related species in the gas phase and reduction of the growth rate both due to oxygen introduction. The results suggest that the (H, C, O, N) system could give higher concentration of nitrogen than that of the (H, C, N) system without degradation of the crystal quality.