Band gap tuning of Ni1−xMgxO films by radio-frequency sputter deposition for deep-ultraviolet photodetectors
Band gap tuning of Ni1−xMgxO films by radio-frequency sputter deposition for deep-ultraviolet photodetectors
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DOI：
10.7567/apex.8.105801
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发表时间：
2015-09
影响因子：
2.3
通讯作者：
H. Nishitani;K. Ohta;S. Kitano;Ryosuke Hamano;M. Inada;Tomohiro Shimizu;S. Shingubara;H. Kozuka;T. Saitoh
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文献类型：
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作者：
H. Nishitani;K. Ohta;S. Kitano;Ryosuke Hamano;M. Inada;Tomohiro Shimizu;S. Shingubara;H. Kozuka;T. Saitoh
采用简单的射频溅射技术和Ni-Mg复合靶制备了基于Ni_（0.52）Mg_（0.48）O薄膜的深紫外光电探测器。Ni 1-xMgxO的带隙可以通过调整Mg含量来调节，而Mg含量又可以通过改变Ni靶上Mg碎片的数量来控制。Ni 1 −xMgxO的晶格常数与Mg含量呈线性关系，而带隙与Mg含量的关系曲线则呈弓形。基于Ni0.52Mg0.48O薄膜制备的光电探测器作为深紫外光电探测器工作，并在276 nm波长处显示出峰值响应。
A deep-ultraviolet photodetector based on a Ni0.52Mg0.48O film was fabricated using a simple radio-frequency sputtering technique and a Ni–Mg composite target. The Ni1−xMgxO band gap can be tuned by adjusting the Mg content, which in turn can be controlled by varying the number of Mg chips on the Ni target. The lattice constant of Ni1−xMgxO linearly depends on the Mg content, whereas the plot of the band gap versus Mg content exhibits bowing. The fabricated photodetector based on the Ni0.52Mg0.48O film operates as a deep-ultraviolet photodetector and shows peak responsivity at a wavelength of 276 nm.