High-temperature operation of a silicon qubit
High-temperature operation of a silicon qubit
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DOI：
10.1038/s41598-018-36476-z
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发表时间：
2019-01-24
影响因子：
4.6
通讯作者：
Moriyama, Satoshi
中科院分区：
文献类型：
--
作者：
Ono, Keiji;Mori, Takahiro;Moriyama, Satoshi
这项研究缓解了硅量子比特的低工作温度限制。量子比特是量子传感器、存储器和计算机的关键元素。硅中的电子自旋是一种很有前途的量子比特，因为它允许较长的相干时间，并可能与当前的硅技术兼容。已经使用门定义的量子点或浅杂质实现了硅量子比特。然而，硅量子比特的工作被限制在毫开尔文温度，从而限制了量子技术的应用。在这项研究中，我们使用单电子隧道输运解决了单个深度杂质，具有高达0.3 eV的强电子限制。我们还利用两个杂质的隧穿输运，通过自旋阻塞效应，实现了5-10K下的量子比特操作。深杂质是由隧道场效应晶体管(TFET)代替传统的FET实现的。随着制备工艺和可控性的进一步提高，这项工作为在高温下操作硅自旋量子比特提供了可能性。
This study alleviates the low operating temperature constraint of Si qubits. A qubit is a key element for quantum sensors, memories, and computers. Electron spin in Si is a promising qubit, as it allows both long coherence times and potential compatibility with current silicon technology. Si qubits have been implemented using gate-defined quantum dots or shallow impurities. However, operation of Si qubits has been restricted to milli-Kelvin temperatures, thus limiting the application of the quantum technology. In this study, we addressed a single deep impurity, having strong electron confinement of up to 0.3 eV, using single-electron tunnelling transport. We also achieved qubit operation at 5-10 K through a spin-blockade effect based on the tunnelling transport via two impurities. The deep impurity was implemented by tunnel field-effect transistors (TFETs) instead of conventional FETs. With further improvement in fabrication and controllability, this work presents the possibility of operating silicon spin qubits at elevated temperatures.