Core-level attosecond transient absorption spectroscopy of laser-dressed solid films of Si and Zr
Core-level attosecond transient absorption spectroscopy of laser-dressed solid films of Si and Zr
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DOI：
10.1103/physrevb.94.165125
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发表时间：
2016-10
影响因子：
3.7
通讯作者：
E. Seres;J. Seres;C. Serrat;S. Namba
中科院分区：
文献类型：
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作者：
E. Seres;J. Seres;C. Serrat;S. Namba
我们利用 80-220 eV 光谱范围内的极紫外 (XUV) 吸收光谱，从实验和理论上研究了 Si 和 Zr 的导带 (CB) 波函数对近红外激光场的超快响应。测量的 XUV 传输动态表明 CB 的波函数遵循修整激光脉冲的电场。从这些方面来说，早期的激光修整主要是针对气体进行研究。在 100 eV 附近的 SiL2,3 边缘、150 eV 附近的 SiL1 边缘和 180 eV 附近的 ZrM4,5 边缘附近进行了两飞秒和 200 阿秒时间步长的测量。观察到的变化取决于 XUV 探测脉冲激发的核心态。在Si的2p到CB跃迁处，XUV透射率通过修整激光脉冲的作用而增加，而在Si的2s到CB跃迁和Zr的3d到CB跃迁处，XUV透射率下降。此外，观察到从 Si 的 2p1/2 和 2p3/2 水平以及 Zr 的 3d3/2 和 3d5/2 水平转变之间的节拍，周期为 20.7 fs 和 3.6 fs。
We investigated experimentally as well as theoretically the ultrafast response of the wave function of the conduction band (CB) of Si and Zr to a near-infrared laser field using extreme ultraviolet (XUV) absorption spectroscopy in the spectral range of 80–220 eV. The measured dynamics of the XUV transmission demonstrates that the wave function of the CB follows the electric field of the dressing laser pulse. In these terms, laser dressing was earlier mainly studied on gases. Measurements with two-femtosecond and 200-attosecond temporal steps were performed in the vicinity of the SiL2,3 edge near 100 eV, the SiL1 edge near 150 eV, and the ZrM4,5 edge near 180 eV. The observed changes were dependent on the core states being excited by the XUV probe pulse. At the 2p to CB transitions of Si, the XUV transmission increased via the effect of the dressing laser pulse, while at the 2s to CB transition of Si and the 3d to CB transition of Zr, the XUV transmission decreased. Furthermore, beats between the transition from 2p1/2 and 2p3/2 levels of Si and from 3d3/2 and 3d5/2 levels of Zr were observed with 20.7 fs and 3.6 fs periods.