High Quality Factor Graphene Resonator Fabrication Using Resist Shrinkage-Induced Strain
High Quality Factor Graphene Resonator Fabrication Using Resist Shrinkage-Induced Strain
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DOI：
10.1143/apex.5.117201
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发表时间：
2012-11-01
影响因子：
2.3
通讯作者：
Ishihara, Sunao
中科院分区：
文献类型：
--
作者：
Oshidari, Yuta;Hatakeyama, Taiki;Ishihara, Sunao
我们使用SU-8收缩来制作应变石墨烯谐振器，以在石墨烯谐振器中产生高品质因数。在SU-8胶槽上制作了几层石墨烯谐振器。利用聚焦离子束化学气相沉积(FIB-CVD)沉积类金刚石(DLC)薄膜，利用聚焦离子束化学气相沉积(FIB-CVD)技术制备类金刚石(DLC)薄膜，并利用FIB刻蚀技术进行微调。由于SU-8急剧收缩，因此使用了退火法对石墨烯谐振器施加张应变。我们还观察到这些石墨烯谐振器在退火后的谐振频率和品质因数都有所增加。在室温下，对于10微米长的谐振器，最佳样品的品质因数超过7000。(C)2012年日本应用物理学会
We used SU-8 shrinkage to fabricate strained graphene resonators to produce a high quality factor in a graphene resonator. A-few-layer graphene resonators were fabricated on a trench of an SU-8 resist. These resonators were clamped with diamond-like carbon (DLC), which was deposited by using focused-ion-beam chemical vapor deposition (FIB-CVD), and trimmed by using FIB etching. Annealing was used to apply tensile strain to the graphene resonators because SU-8 shrinks drastically. We also observed an increase in resonant frequency and quality factor in these graphene resonators after annealing. At room temperature, the quality factor of the best sample exceeded 7,000 for a resonator length of 10 mu m. (C) 2012 The Japan Society of Applied Physics