Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs
Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs
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DOI：
10.1109/ted.2013.2281615
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发表时间：
2014-02-01
影响因子：
3.1
通讯作者：
Iniguez, Benjamin
中科院分区：
文献类型：
--
作者：
Holtij, Thomas;Graef, Michael;Iniguez, Benjamin
本文提出了一个长、短沟道无结积累型双栅MOSFET的二维闭合解析紧凑模型。利用Poisson方程和Schwarz-Christoffel的保角变换技术，导出了基于物理的二维势模型。从这个封闭形式的解决方案，我们推导出简单的方程的阈值电压V-T和亚阈值斜率S的计算。使用朗伯的W-函数和平滑函数之间的过渡耗尽和积累区域，一个统一的电荷模型适用于所有的操作制度。研究了器件物理参数之间的相关性及其对器件性能的影响。我们的2-D物理为基础的紧凑型模型与2-D技术的计算机辅助设计（TCAD）Sentaurus模拟数据进行比较。
A 2-D closed form, analytical compact model for long- and short-channel junctionless accumulation mode double gate MOSFETs is presented. The physics-based 2-D model for the potential is derived with the help of Poisson's equation and the conformal mapping technique by Schwarz-Christoffel. From this closed-form solution, we derive simple equations for the calculation of the threshold voltage V-T and subthreshold slope S. Using Lambert's W-function and a smoothing function for the transition between the depletion and accumulation regions, a unified charge model valid for all operating regimes is developed. Dependencies between the physical device parameters and their impact on the device performance are worked out. A comparison of our 2-D physics-based compact model is done versus 2-D technology computer-aided design (TCAD) Sentaurus simulation data.