Non-Planckian infrared emission from GaAs devices with electrons and lattice out-of-thermal-equilibrium.
Non-Planckian infrared emission from GaAs devices with electrons and lattice out-of-thermal-equilibrium.
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具有电子和晶格非热平衡的 GaAs 器件的非普朗克红外发射。
DOI：
10.1364/oe.415232
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发表时间：
2021
期刊：
影响因子：
3.8
通讯作者：
Z. An
中科院分区：
文献类型：
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作者：
Yuexin Zou;H. Pan;Shenyang Huang;Pingping Chen;Hugen Yan;Z. An
随着器件尺寸的缩小，半导体电子器件中的电子通常被电驱动而脱离与用于其功能的托管晶格的热平衡。由此可以直接用非接触式红外辐射测温法在单一特征温度下观察到晶格的100焦耳加热。本文报道，由于非平衡超热电子的附加贡献，电偏置GaAs器件的红外发射谱明显偏离普朗克分布，其有效温度远高于晶格温度（Te>Tl）。来自这些热电子的渐逝红外发射通过近场超材料光栅耦合输出，因此对总远场发射光谱具有重要意义。当电子热点在光栅共振处与光学热点在空间上重叠时，也观察到共振发射峰。我们的工作开辟了一个新的方向，研究非平衡动力学（非普朗克）红外发射光谱，并提供了重要的影响到微观能量耗散和热管理的纳米电子学。
With the downscaled device size, electrons in semiconductor electronics are often electrically driven out-of-thermal-equilibrium with hosting lattices for their functionalities. The thereby electrothermal Joule heating to the lattices can be visualized directly by the noncontact infrared radiation thermometry with the hypothetic Planck distribution at a single characteristic temperature. We report here that the infrared emission spectrum from electrically biased GaAs devices deviates obviously from Planck distribution, due to the additional contribution from non-equilibrium hot electrons whose effective temperature reaches much higher than that of the lattice (Te>Tl). The evanescent infrared emission from these hot electrons is out-coupled by a near-field metamaterial grating and is hence made significant to the total far-field emission spectrum. Resonant emission peak has also been observed when the electron hotspots are managed to overlap spatially with the optical hotspots at the grating resonance. Our work opens a new direction to study nonequilibrium dynamics with (non-Planckian) infrared emission spectroscopy and provides important implications into the microscopic energy dissipation and heat management in nanoelectronics.
Mitsuru Asano：“锂钠和锂铯硼硅酸盐玻璃汽化的质谱研究”高温科学。
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