Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy
Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy
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分子束外延生长的 GaAs 层中椭圆形缺陷的显微光致发光
DOI：
10.1063/1.122352
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发表时间：
1998
影响因子：
4
通讯作者：
M. Kawata
中科院分区：
文献类型：
--
作者：
J. Kasai;M. Kawata
用低温显微光致发光方法研究了分子束外延GaAs层中椭圆缺陷的光学性质。椭圆形缺陷的光致发光（PL）光谱表现出新的明显的峰，它具有窄的宽度（0.5毫电子伏）和强强度的激子发光从无缺陷的区域的外延层。的激发功率的依赖性和我们的PL图像测量表明，峰值是由于结合到缺陷的激子的重组。自由激子发光的PL图像清楚地揭示了一对不对称的椭圆形缺陷的特征，每个缺陷具有由层错平面组成的金字塔结构。清晰的特征表明在金字塔内有效的载流子限制，其中堆垛层错平面起到势垒的作用。
Using a low-temperature microphotoluminescence method, we have investigated the optical properties of oval defects in a GaAs layer grown by molecular beam epitaxy. The photoluminescence (PL) spectra of oval defects exhibited new distinct peaks, which had a narrow width (0.5 meV) and a strong intensity comparable to the exciton luminescence from a defect-free region of the epilayer. The excitation-power dependence and our PL image measurements suggest that the peaks are due to the recombination of excitons bound to the defects. The PL image of the free-exciton luminescence clearly revealed the features of a pair of asymmetric oval defects, each of which had a pyramidal structure consisting of stacking fault planes. The clear features indicate effective carrier confinement within the pyramid, where the stacking fault planes functioned as a potential barrier.