An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations
An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations
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DOI：
10.1109/tpel.2013.2278919
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发表时间：
2014-05
影响因子：
6.7
通讯作者：
Niall Oswald;P. Anthony;N. McNeill;B. Stark
中科院分区：
文献类型：
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作者：
Niall Oswald;P. Anthony;N. McNeill;B. Stark
额定值为1200 V的碳化硅（SiC）开关功率器件（MOSFET、JFET）现已上市，与SiC二极管配合使用，相对于与快速恢复二极管配对的硅（Si）绝缘栅双极晶体管（IGBT），它们的开关损耗大幅降低。低压工业变速驱动器是1200 V器件的关键应用，人们对用基于SiC的器件取代目前在该应用中占主导地位的Si IGBT和二极管非常感兴趣。然而，基于SiC的器件的大部分性能益处是由于其增加的开关速度（di/dt，dv/ dt），这引起了增加的电磁干扰（EMI）生成和对逆变器馈电电机的可靠性的有害影响的问题。在本文中，开关损耗和器件开关波形的高频频谱幅度之间的权衡实验量化为全硅，硅-碳化硅，和全碳化硅器件组合。虽然利用SiC基器件的全开关速度能力会显著增加EMI的产生，但当以相当的dv/dt工作时，全SiC组合相对于全Si组合可将开关损耗降低70%。它还表明，与Si-SiC器件组合获得的损耗EMI权衡可以显着改善通过驱动IGBT与修改的栅极电压分布。
Silicon carbide (SiC) switching power devices (MOSFETs, JFETs) of 1200 V rating are now commercially available, and in conjunction with SiC diodes, they offer substantially reduced switching losses relative to silicon (Si) insulated gate bipolar transistors (IGBTs) paired with fast-recovery diodes. Low-voltage industrial variable-speed drives are a key application for 1200 V devices, and there is great interest in the replacement of the Si IGBTs and diodes that presently dominate in this application with SiC-based devices. However, much of the performance benefit of SiC-based devices is due to their increased switching speeds ( di/dt, dv/ dt), which raises the issues of increased electromagnetic interference (EMI) generation and detrimental effects on the reliability of inverter-fed electrical machines. In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and all-SiC device combinations. While exploiting the full switching-speed capability of SiC-based devices results in significantly increased EMI generation, the all-SiC combination provides a 70% reduction in switching losses relative to all-Si when operated at comparable dv/dt. It is also shown that the loss-EMI tradeoff obtained with the Si-SiC device combination can be significantly improved by driving the IGBT with a modified gate voltage profile.