Selenization kinetics in Cu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inks

Selenization kinetics in Cu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inks
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DOI:
10.1016/j.solmat.2015.12.016
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发表时间:
2016-12-01
影响因子:
6.9
通讯作者:
Beattie, Neil S.
Beattie, Neil S.
中科院分区:
材料科学2区
文献类型:
--
作者:
Qu, Yongtao;Zoppi, Guillaume;Beattie, Neil S.

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地球上丰富的 Cu2ZnSn(S,Se)(4) (CZTSSe) 薄膜光伏吸收层是通过在富硒气氛中对 Cu2ZnSnS4 (CZTS) 纳米颗粒薄膜进行退火而制备的。硒化时间(5、10、20 和 40 分钟)和温度(450、500、550 和 600 摄氏度)的系统变化可以深入了解硒化过程的动力学,特别是再结晶和晶粒生长。 Se-S 阴离子交换遵循 Avrami 模型,其中 CZTS 硒化受金属阳离子重排序和晶界迁移限制的不规则一维过程控制。观察到 CZTSSe 晶粒生长遵循正态关系,晶粒生长指数接近等轴晶粒的理想情况,计算出晶界迁移能为 85.38 kJ/imol。这些硒化变量对所得 CZTSSe 薄膜的质量以及器件性能具有根本性影响。在 500 摄氏度下硒化 20 分钟,获得了 5.4% 的峰值器件太阳能转换效率。人们发现器件效率对这些变量高度敏感,在晶粒生长和薄膜质量之间获得适当的平衡至关重要。 (C) 2015 年作者。由 Elsevier B.V. 出版。这是一篇基于 CC BY 许可的开放获取文章。
Earth-abundant Cu2ZnSn(S,Se)(4) (CZTSSe) thin film photovoltaic absorber layers are fabricated by annealing Cu2ZnSnS4 (CZTS) nanoparticle thin films in a selenium rich atmosphere. Systematic variation of the selenization time (5, 10, 20 and 40 min) and temperature (450, 500, 550 and 600 degrees C) provides insight into the kinetics of the selenization process and in particular recrystallization and grain growth. Se-S anion exchange is found to follow Avrami's model in which the CZTS selenization is controlled by an irregular one-dimensional process limited by metal cation re-ordering and grain boundary migration. CZTSSe grain growth is observed to follow a normal relation with a grain growth exponent close to the ideal case of equiaxed grains and the grain boundary migration energy is calculated to be 85.38 kJ/imol. These selenization variables have a fundamental influence on the quality of the resulting CZTSSe thin film and consequently the device performance. A peak device solar energy conversion efficiency of 5.4% was obtained for selenization at 500 degrees C for 20 min. The device efficiency was found to be highly sensitive to these variables and it is critical to obtain an appropriate balance between grain growth and thin film quality. (C) 2015 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license.