A quantum dot in the limit of strong coupling to reservoirs
A quantum dot in the limit of strong coupling to reservoirs
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DOI：
10.1016/s0921-4526(98)00533-x
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发表时间：
1998-12-01
影响因子：
2.8
通讯作者：
von Klitzing, K
中科院分区：
文献类型：
--
作者：
Schmid, J;Weis, J;von Klitzing, K
我们研究量子点，这是定义在一个二维电子系统（2DES）通过分裂门和集中的情况下，点是强耦合到水库。在零漏源电压，我们发现在一个完整的库仑阻塞制度的微分电导的最大值，并研究这些最大值的分裂下的外部磁场的影响，以及它们的温度依赖性。结果与安德森模型的预测定性一致。还观察到接近于但不处于零漏极-源极电压的谐振，这仍然缺乏很好的解释。(C)1998 Elsevier Science B. V.保留所有权利。
We study quantum dots which are defined in a two-dimensional electron system (2DES) via split gates and concentrate on the case where the dots are strongly coupled to reservoirs. At zero drain-source voltage we find maxima in the differential conductance over one whole Coulomb-blockade regime and study the splitting of these maxima under the influence of an external magnetic field, as well as their temperature dependence. The results agree qualitatively with predictions of the Anderson model. Resonances close to - but not at - zero drain-source voltage are also observed that are still lacking a good explanation. (C) 1998 Elsevier Science B.V. All rights reserved.