Low-frequency dispersion characteristics of GaN HFETs
Low-frequency dispersion characteristics of GaN HFETs
复制标题
GaN HFET 的低频色散特性
DOI：
10.1049/el:19951298
复制
发表时间：
1995
影响因子：
1.1
通讯作者：
K. Doverspike
中科院分区：
文献类型：
--
作者：
W. Kruppa;S. Binari;K. Doverspike
研究了AlN/GaN高频场效应管的低频跨导和输出电阻随温度的变化规律。发现了色散特性，这表明在GaN通道层中存在捕获活性。活化能接近1 eV的陷阱很明显。
The low-frequency transconductance and output resistance of AlN/GaN HFETs have been examined as functions of temperature. Dispersive characteristics were found which are indicative of trapping activity in the GaN channel layer. Traps with an activation energy near 1 eV were evident.