An in situ monitoring method for PECVD process equipment condition
An in situ monitoring method for PECVD process equipment condition
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DOI：
10.1088/2058-6272/aafb2b
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发表时间：
2019-06-01
影响因子：
1.7
通讯作者：
Hong, S.
中科院分区：
文献类型：
--
作者：
Kang, G.;An, S.;Hong, S.
成功一致的等离子体处理的关键是在特定的生产周期内保持一致的工艺室条件。为了缓解这一担忧，采用现场工艺监测传感器对直接等离子体沉积步骤和远程等离子体系统清洗步骤的等离子体腔条件进行了研究。现场传感器包括光学发射光谱(OES)、光学等离子体监测传感器(OPMS)、电压电流探头(VI-Probe)和自等离子体OES(SP-OES)。在沉积过程中，我们通过OES、OPMS和VI探头对与所施加的射频功率相关的等离子体条件进行监控。在腔室清洗步骤中，使用远程等离子体系统不允许通过侧壁进行等离子体监控，因为等离子体不是在工艺腔室中形成的，因此我们使用SP-OES来监控腔室清洗过程步骤中的副产物气体化学。本文给出了成功的监测结果，以及在电弧检测、零件故障检测和清洗过程化学分析等方面的一些有用的应用。现场传感器的使用和适当的组合可以帮助更好地了解等离子体过程，实现对等离子体过程更精确的控制。
A key to successful consistent plasma processing is maintaining a consistent process chamber condition over a certain production period. To alleviate the concern, in situ process monitoring sensors are employed to investigate the plasma chamber conditions of both the deposition step with direct plasma and the cleaning step with a remote plasma system. In situ sensors are optical emission spectroscopy (OES), optical plasma monitoring sensors (OPMS), voltage current probes (VI-probes), and self-plasma OES (SP-OES). During the deposition, we perform the monitoring of a plasma condition associated with the applied RF power via OES, OPMS, and a VI-probe. In the chamber cleaning step using a remote plasma system does not allow plasma monitoring through the sidewall because the plasma is not formed in the process chamber, thus we employed SP-OES to monitor the by-product gas chemistry during the chamber cleaning process step. Successful monitoring results with some useful applications, such as arc detection, part failure detection, and cleaning process chemistry analysis, are presented in this paper. The use of in situ sensors with proper combination can help to understand the plasma process better, to achieve more precise control of plasma processing.