Ferromagnetic GaAS/GaMnAS Core-Shell Nanowires Grown by Molecular Beam Epitaxy
Ferromagnetic GaAS/GaMnAS Core-Shell Nanowires Grown by Molecular Beam Epitaxy
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DOI：
10.1021/nl9020717
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发表时间：
2009-11-01
期刊：
影响因子：
10.8
通讯作者：
Reiger, Elisabeth
中科院分区：
文献类型：
--
作者：
Rudolph, Andreas;Soda, Marcello;Reiger, Elisabeth
采用分子束外延法制备了GaAs/GaMnAs核壳纳米线。以金为催化剂，在典型的纳米线生长条件下合成了核心GaAs纳米线。对于GaMnAs外壳，温度急剧降低，以达到对高质量GaMnAs至关重要的低温生长条件，GaMnAs外壳在核心GaAs纳米线的侧面外延生长。得到了20k的铁磁转变温度。磁各向异性研究表明，磁易轴平行于纳米线轴。
GaAs/GaMnAs core-shell nanowires were grown by molecular beam epitaxy. The core GaAs nanowires were synthesized under typical nanowire growth conditions using gold as catalyst. For the GaMnAs shell the temperature was drastically reduced to achieve low-temperature growth conditions known to be crucial for high-quality GaMnAs, The GaMnAs shell grows epitaxially on the side facets of the core GaAs nanowires. A ferromagnetic transition temperature of 20 K is obtained. Magnetic anisotropy studies indicate a magnetic easy axis parallel to the nanowire axis.