Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films

Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films
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分子束外延过程中 Ba 与 Si 沉积速率比对 BaSi2 外延薄膜载流子浓度和光谱响应的影响

DOI:
10.1063/1.4994850
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发表时间:
2018
影响因子:
3.2
通讯作者:
and Takashi Suemasu
and Takashi Suemasu
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Ryota Takabe;Tianguo Deng;Komomo Kodama;Yudai Yamashita;Takuma Sato;Kaoru Toko;and Takashi Suemasu

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