InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings
InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings
复制标题
具有表面光栅和侧壁光栅的 InGaN/GaN 分布式反馈激光二极管
DOI：
10.3390/mi10100699
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发表时间：
2019-10-01
期刊：
影响因子：
3.4
通讯作者：
Luo, Siyuan
中科院分区：
文献类型：
--
作者：
Deng, Zejia;Li, Junze;Luo, Siyuan
可见光通信等各种潜在应用需要具有窄线宽和蓝光区域单波长发射的激光源。基于氮化镓 (GaN) 的分布式反馈激光二极管 (DFB-LD) 是一种很有前途的光源，可以满足这些要求。在这里，我们提出了 GaN DFB-LD，它们共享生长和制造工艺，并且在同一外延衬底上具有表面光栅和侧壁光栅，这使得不同结构的 LD 具有可比性。通过电脉冲泵浦，分别实现了 398.5 和 399.95 nm 的单峰发射，半峰全宽 (FWHM) 分别为 0.32 和 0.23 nm。表面和侧壁光栅是通过电子束光刻和电感耦合等离子体蚀刻沿着p接触金属条制造的。脊宽为2.5μm的DFB LD表现出比脊宽为5和10μm的DFB LD更小的FWHM，表明窄脊宽有利于DFB LD的线宽变窄。具有侧壁光栅的DFB LD的斜率效率高于具有相同脊宽和光栅周期的表面光栅DFB LD。我们的实验可以为优化光栅和 GaN DFB-LD 提供可靠且简单的方法。
A variety of potential applications such as visible light communications require laser sources with a narrow linewidth and a single wavelength emission in the blue light region. The gallium nitride (GaN)-based distributed feedback laser diode (DFB-LD) is a promising light source that meets these requirements. Here, we present GaN DFB-LDs that share growth and fabrication processes and have surface gratings and sidewall gratings on the same epitaxial substrate, which makes LDs with different structures comparable. By electrical pulse pumping, single-peak emissions at 398.5 and 399.95 nm with a full width at half maximum (FWHM) of 0.32 and 0.23 nm were achieved, respectively. The surface and sidewall gratings were fabricated alongside the p-contact metal stripe by electrical beam lithography and inductively coupled plasma etching. DFB LDs with 2.5 mu m ridge width exhibit a smaller FWHM than those with 5 and 10 mu m ridge widths, indicating that the narrow ridge width is favorable for the narrowing of the line width of the DFB LD. The slope efficiency of the DFB LD with sidewall gratings is higher than that of surface grating DFB LDs with the same ridge width and period of gratings. Our experiment may provide a reliable and simple approach for optimizing gratings and GaN DFB-LDs.