Effects of polarization on four-beam laser interference lithography
Effects of polarization on four-beam laser interference lithography
复制标题
偏振对四光束激光干涉光刻的影响
DOI：
10.1063/1.4793752
复制
发表时间：
2013-02-25
影响因子：
4
通讯作者：
Maple, Carsten
中科院分区：
文献类型：
--
作者：
Wang, Dapeng;Wang, Zuobin;Maple, Carsten
本文论证了偏振在四光束干涉光刻中干涉图样、图样对比度和周期的形成中起着重要的作用。在理论分析、仿真和实验的基础上，提出了三种不同的偏振模式，研究了偏振对四光束激光干涉的影响。建立了一套四光束激光干涉系统，用于硅表面改性。结果表明，只有在TE-TE-TM-TM模的情况下，二次周期性或调制才是不对准或不相等入射角的结果。所得到的方向图与理论分析和模拟结果有很好的一致性。
This paper demonstrates that polarization plays an important role in the formation of interference patterns, pattern contrasts, and periods in four-beam interference lithography. Three different polarization modes are presented to study the effects of polarization on four-beam laser interference based on theoretical analysis, simulations, and experiments. A four-beam laser interference system was set up to modify the silicon surface. It was found that the secondary periodicity or modulation was the result of the misaligned or unequal incident angles only in the case of the TE-TE-TM-TM mode. The resulting patterns have shown a good correspondence with the theoretical analysis and simulations.