Surface damage of crystalline silicon by low fluence femtosecond laser pulses
Surface damage of crystalline silicon by low fluence femtosecond laser pulses
复制标题
低能量密度飞秒激光脉冲对晶体硅的表面损伤
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
D. Hardt
中科院分区：
文献类型：
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作者：
Y. Lam;D. V. Tran;H. Zheng;V. M. Murukeshan;J. Chai;D. Hardt
用重复频率为250 Hz、持续时间为150 fs、波长为775 nm的多个激光脉冲辐照保持在大气压下的晶体硅。激光脉冲是圆偏振的，峰值激光能量密度为0.03 J/cm 2。我们观察到的表面损伤在一个低得多的能量密度和脉冲数较低的文献报道相比。观察到表面损伤、裂纹和凹坑形成。记录了作为激光脉冲数的函数的表面损伤的演变。这些观察结果与文献中的发现相反，文献中的发现是，当被多个脉冲照射时，硅表面变得结构化。
Crystalline silicon kept at atmospheric pressure was irradiated with 775 nm multiple laser pulses of 150 fs duration at repetition rate 250 Hz. The laser pulses were circularly polarized, with a peak laser fluence of 0.03 J/cm2. We observed surface damage at a much lower fluence and lower number of pulses compared to that reported in the literature. Surface damage, cracks and pits formation were observed. The evolution of the surface damage as a function of the number of laser pulses was recorded. The observations were in contrast to the findings in the literature that the silicon surface became structured when irradiated by multiple pulses.