Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
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III-V族混合半导体和GaSb衬底上的AlGaSb/AlGaAsSb半导体激光器的能带结构和晶格常数图
DOI：
10.1143/jjap.19.1695
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发表时间：
1980
影响因子：
1.5
通讯作者：
Y. Takeda
中科院分区：
文献类型：
--
作者：
A. Sasaki;M. Nishiuma;Y. Takeda
研究了18种三元和15种四元III-V族混合半导体材料的能隙、能带结构和相对介电常数的变化。介绍了一种由AlGaSb/AlGaAsSb/GaSb构成的半导体激光器，其发射波长范围为1.3 - 1.7 μm。在（111）B取向的GaSb衬底上成功地生长了均匀的AlGaSb和AlGaAsSb混合半导体层。在77 K下，在有源层厚度为1.6 μm的异质隔离条形激光器中观察到了1.2 μm附近的激光振荡，略高于4.0 kA/cm 2。
Variations in energy gap, band structure, and relative dielectric constants were examined in 18 ternary and 15 quaternary III-V mixed semiconductor materials for optical devices. A semiconductor laser constructed with AlGaSb/AlGaAsSb on GaSb emitting a wavelength in the range from 1.3 to 1.7 µm is described. Uniform layers of mixed semiconductors, AlGaSb and AlGaAsSb, were successfully grown on a (111)B-oriented GaSb substrate. Lasing oscillation near 1.2 µm was observed at 77 K, slightly beyond 4.0 kA/cm2, in a hetero-isolation stripe laser with an active layer 1.6 µm thick.