Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer
Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer
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DOI：
10.1002/adma.201201051
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发表时间：
2012-06-12
影响因子：
29.4
通讯作者：
Im, Seongil
中科院分区：
文献类型：
--
作者：
Lee, Young Tack;Jeon, Pyo Jin;Im, Seongil
首次在单根ZnO纳米线上实现了一维非易失性铁电存储器反相器电路。该电路具有大的存储器窗口和动态编程/擦除行为。ZnO纳米线的一部分与铁电聚合物形成顶栅铁电场效应晶体管的沟道，而其余部分用作电阻器。
A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors.