Permanent Damage Introduced by Single Particles Incident on Silicon Devices
Permanent Damage Introduced by Single Particles Incident on Silicon Devices
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DOI：
10.1109/tns.1983.4333165
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发表时间：
1983-12
影响因子：
1.8
通讯作者：
J. R. Srour;Z. Shanfield;R. Hartmann;S. Othmer;D. Newberry
中科院分区：
文献类型：
--
作者：
J. R. Srour;Z. Shanfield;R. Hartmann;S. Othmer;D. Newberry
已经对单粒子对硅器件造成的永久损伤的影响进行了分析和实验研究。对入射到器件耗尽区的单个中子或α粒子产生的暗电流增加的计算表明，在某些VLSI电路（例如成像阵列）中可能会遇到问题。提出了 14-MeV 中子辐照硅中初级碰撞原子的能量和角度分布的测定。这些分布被用在分布式集群模型中，试图解释辐照收缩电阻器中测量到的电阻变化。
Analytical and experimental studies of the effects of permanent damage introduced in silicon devices by single particles have been performed. Calculation of dark current increases produced by a single neutron or alpha particle incident on a device depletion region suggests that problems may be encountered in certain VLSI circuits, such as imaging arrays. Determinations of the energy and angular distributions of primary knock-on atoms in 14-MeV neutron-irradiated silicon are presented. These distributions are employed in a distributed cluster model in an attempt to account for measured resistance changes in irradiated pinch resistors.