n-Type Organic Field-Effect Transistors Based on Bisthienoisatin Derivatives
n-Type Organic Field-Effect Transistors Based on Bisthienoisatin Derivatives
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DOI：
10.1021/acsaelm.9b00105
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发表时间：
2019-04
影响因子：
4.7
通讯作者：
Dongho Yoo;Xuyi Luo;Tsukasa Hasegawa;M. Ashizawa;T. Kawamoto;H. Masunaga;N. Ohta;Hidetoshi Matsumoto;Jianguo Mei;Takehiko Mori
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文献类型：
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作者：
Dongho Yoo;Xuyi Luo;Tsukasa Hasegawa;M. Ashizawa;T. Kawamoto;H. Masunaga;N. Ohta;Hidetoshi Matsumoto;Jianguo Mei;Takehiko Mori
合成了双噻吩靛红（BTI-R，R =正丙基、正己基和2-乙基己基）和双氰基亚甲基衍生物（BTICN-R），并对它们的薄膜晶体管进行了研究。晶体具有均匀的堆叠结构，但堆叠的堆积模式取决于烷基链而变化。这些材料显示出n型晶体管特性，并且BTICNs通常表现出比BTIs更高的性能。特别地，BTICN-EH显示出超过0.2 cm 2 V-1 s-1的最大电子迁移率。
Bisthienoisatins (BTI-R with R = n-propyl, n-hexyl, and 2-ethylhexyl) and the dicyanomethylene derivatives (BTICN-R) are prepared, and the thin-film transistors are investigated. The crystals have uniform stacking structures, but the packing pattern of the stacks varies depending on the alkyl chains. These materials show n-type transistor properties, and BTICNs exhibit greater performance than BTIs in general. In particular, BTICN-EH shows the maximum electron mobility exceeding 0.2 cm2 V–1 s–1.