Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate
Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate
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DOI：
10.1557/s43578-021-00387-z
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发表时间：
2021-09-29
影响因子：
2.7
通讯作者：
Khan, Asif
中科院分区：
文献类型：
--
作者：
Hasan, Samiul;Mamun, Abdullah;Khan, Asif
我们报告了高品质的外延氮化铝的生长演变，使用氮作为载气的蓝宝石衬底上使用MOCVD。一系列的样品生长的厚度从1到4 μ m不等，利用两个步骤的过程中没有任何中间层。SEM/AFM数据显示，沿生长方向沿着厚达3 μ m的空隙，有助于生长较厚的层并实现低位错密度。对于4 μ m厚的样品，XRD研究表明（10 i2）面摇摆曲线的半高宽为289弧秒，用威廉姆森和霍尔程序计算的总位错密度为1.1 × 10（9）cm（-2）。拉曼的研究表明，E-2（高）声子峰线宽为3.4厘米（-1），在约659厘米（-1），显示出显着低的压缩应力为0.59 GPa的4 μ m厚的AlN。这项研究显示了一个简单和经济的方法来生长高品质的氮化铝使用N-2作为载气。
We report the growth evolution of high-quality epitaxial aluminum nitride using nitrogen as carrier gas on the sapphire substrate using MOCVD. A series of samples were grown with thickness varying from 1 to 4 mu m utilizing a two-step process without any interlayer. SEM/AFM data showed voids up to 3 mu m thickness along the growth direction, aiding to grow thicker layers and achieve low dislocation densities. For the 4 mu m thick sample, XRD studies showed the FWHM of 289 arcsec of the rocking curve for (10i2) plane and total calculated dislocation density 1.1 x 10(9) cm(-2) using Williamson and Hall procedure. Raman's study showed the E-2 (high) phonon peak linewidth of 3.4 cm(-1) at around 659 cm(-1), showing significantly low compressive stress of 0.59 GPa for 4 mu m thick AlN. This study shows a simplified and economical method to grow high-quality AlN using N-2 as a carrier gas.