Origin of the turn-on phenomenon in Td-MoTe2
Origin of the turn-on phenomenon in Td-MoTe2
复制标题
Td-MoTe2 开通现象的起源
DOI：
10.1103/physrevb.96.075132
复制
发表时间：
2017-08-15
影响因子：
3.7
通讯作者：
Sun, Y. P.
中科院分区：
文献类型：
--
作者：
Pei, Q. L.;Meng, W. J.;Sun, Y. P.
我们在不同的温度和磁场下进行了电阻率和扫描隧道显微镜/光谱（STM/STS）实验，以研究T-d -MoTe 2的开启（t-o）现象的起源。有两个有趣的观察。首先，磁电阻（MR）遵循科勒规则标度：MR类似于（H/rho（0））（m），其中m近似为1.92，并且不同磁场下的t-o温度T* 也可以由T* 标度，类似于（H-H-c）（nu），其中nu = 1/2。其次，通过STM/STS实验验证了T-d-MoTe 2中存在补偿电子空穴袋和温度诱导的电子结构相变。与T-d-MoTe 2单晶在H = 0时的STS相比，即使外加磁场达到7 T，STS也几乎没有变化。讨论了T-d-MoTe_2中t-o现象的起源。同时，分析了t-o现象在空穴和电子密度几乎平衡的极端磁电阻材料以及空穴或电子密度占主导地位的其它系统中的普遍性和适用性。
We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of T-d -MoTe2. There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler's rule scaling: MR similar to (H/rho(0))(m) with m approximate to 1.92 and the t-o temperature T* under different magnetic fields can also be scaled by T* similar to (H-H-c)(nu) with nu = 1/2. Secondly, a combination of compensated electron-hole pockets and a possible electronic structure phase transition induced by the temperature have been validated in T-d-MoTe2 by the STM/STS experiments. Compared with the STS of T-d-MoTe2 single crystal under H = 0, the STS hardly changes even when the applied field is up to 7 T. The origins of the t-o phenomenon in T-d-MoTe2 are discussed. Meanwhile, we analyzed the universality and applicability of the t-o phenomenon in the extreme MR materials with almost balanced hole and electron densities as well as with other systems where the density of hole or electron is in a dominant position.