Electrical-thermal coupling mechanism on operating limit of LDMOS transistor
Electrical-thermal coupling mechanism on operating limit of LDMOS transistor
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DOI：
10.1109/iedm.2000.904264
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发表时间：
2000-12
期刊：
影响因子：
--
通讯作者：
Y. Chung;B. Baird
中科院分区：
文献类型：
--
作者：
Y. Chung;B. Baird
不断缩小特征尺寸和提高功能集成度的努力现在受到处理增加的功耗的有限能力的严重挑战，不仅在电力电子领域，而且在超大规模集成电路和超大规模集成电路领域。由自加热产生的电能和热能之间的相互作用是理解半导体器件在瞬态和稳态操作中的功率耗散极限和安全操作区域（SOA）的基础。本论文针对LDMOS器件的电热耦合现象进行了理论分析和实验研究。本报告讨论了ETC驱动的骤回击穿，“热骤回”，以解释SOA的下降，电压和电流。“热骤回”过程比“本征结温”理论更有利于解释通常在热质量中心观察到的器件失效机制。
The continuing march for reduction of feature size and enhancement of the functional integration is now seriously challenged by the limited capability in handling increased power dissipation, not only in power electronics but also in the field of VLSI and ULSI. Interaction between the electrical and thermal energy generated by self-heating is fundamental in understanding this power dissipation limit and safe operating area (SOA) of the semiconductor devices in both transient and steady-state operations. This work treats the problem of the electrical-thermal coupling (ETC) phenomena based on a LDMOS device through theoretical and experimental analyses. This report discusses an ETC driven snapback breakdown, "Hot-snapback", to explain the decrease in SOA, both voltage and current. The "Hot-snapback" process is much more favorable for explaining the device failure mechanism typically observed at the center of the thermal mass than the "intrinsic junction temperature" theory.