Experimental Results of the Gamma-Ray Imaging Capability With a Si/CdTe Semiconductor Compton Camera
Experimental Results of the Gamma-Ray Imaging Capability With a Si/CdTe Semiconductor Compton Camera
复制标题
Si/CdTe半导体康普顿相机伽马射线成像能力的实验结果
DOI：
10.1109/tns.2008.2012059
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发表时间：
2009
影响因子：
1.8
通讯作者：
N. Kawachi
中科院分区：
文献类型：
--
作者：
S. Takeda;H. Aono;S. Okuyama;S. Ishikawa;H. Odaka;S. Watanabe;M. Kokubun;T. Takahashi;K. Nakazawa;H. Tajima;N. Kawachi
研制了一种由硅（Si）和碲化镉（CdTe）探测器组合而成的半导体康普顿照相机，并对点源、排列点源和扩展源等多种γ射线靶进行了成像性能测试。该相机由一个双面硅条探测器和四层CdTe垫探测器组成，旨在最大限度地减少散射体和目标之间的距离。这是因为康普顿成像的空间分辨率随着目标接近散射体而提高。这种新的相机实现了25 mm的最小距离。通过放置在距离探测器30 mm的目标，分辨率优于3 mm的实验证明了364 keV γ射线。还证明了具有1 mm精度的位置确定。作为反褶积方法，我们选择了迭代算法（称为列表模式期望最大似然法），并将其应用于几种实验数据。对排列点源和扩展目标的康普顿反投影图像进行了解卷积。
A semiconductor Compton camera that combines silicon (Si) and Cadmium Telluride (CdTe) detectors was developed, and its imaging capability was examined with various kinds of gamma-ray targets such as a point source, arranged point sources and an extended source. The camera consists of one double-sided Si strip detector and four layers of CdTe pad detectors, and was designed to minimize the distance between a scatterer and the target. This is because the spatial resolution with Compton imaging improves as the target approaches the scatterer. This new camera realizes a minimum distance of 25 mm. By placing the target at a distance of 30 mm from the detector, resolving power better than 3 mm was demonstrated experimentally for a 364 keVgamma-ray. Positional determination with accuracy of 1 mm was also demonstrated. As a deconvolution method, we selected the iteration algorithm (called List-Mode Expectation-Maximizing Maximum Likelihood), and applied it to several kinds of experimental data. The Compton back projection images of the arranged point sources and an extended object were successfully deconvolved.