In situ GISAXS observation of ion-induced nanoscale pattern formation on crystalline Ge(001) in the reverse epitaxy regime
In situ GISAXS observation of ion-induced nanoscale pattern formation on crystalline Ge(001) in the reverse epitaxy regime
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反向外延体系中离子诱导的晶体 Ge(001) 纳米级图案形成的原位 GISAXS 观察
DOI：
10.1103/physrevb.104.235434
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发表时间：
2021
影响因子：
3.7
通讯作者：
Facsko, Stefan
中科院分区：
文献类型：
--
作者：
Erb, Denise J.;Myint, Peco;Evans-Lutterodt, Kenneth;Ludwig, Karl;Facsko, Stefan
通过掠入射小角 X 射线散射 (GISAXS) 现场观察到离子诱导的纳米级图案在晶体 Ge(001) 表面上的形成。对 GISAXS 强度图的分析产生了表征图案形态变化的几何参数的时间发展。与理论预测和基于连续方程的图案化过程的模拟相比，我们发现非线性区域中极面角度、特征长度和表面粗糙度的时间演化具有良好的一致性。为了实现这一一致性，我们在连续方程中添加了一个附加项，用于调整图案各向异性。
The ion-induced nanoscale pattern formation on a crystalline Ge(001) surface is observedin situby means of grazing incidence small angle x-ray scattering (GISAXS). Analysis of the GISAXS intensity maps yields the temporal development of geometric parameters characterizing the changing pattern morphology. In comparison with theoretical predictions and with simulations of the patterning process based on a continuum equation we find good agreement for the temporal evolution of the polar facet angle, characteristic length, and surface roughness in the nonlinear regime. To achieve this agreement, we included an additional term in the continuum equation which adjusts the pattern anisotropy.