Reductive Deposition of Thin Cu Films Using Ballistic Hot Electrons as a Printing Beam
Reductive Deposition of Thin Cu Films Using Ballistic Hot Electrons as a Printing Beam
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使用弹道热电子作为印刷光束还原沉积铜薄膜
DOI：
10.1149/2.0921606jes
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and N. Koshida
中科院分区：
文献类型：
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作者：
R. Suda;M. Yagi;A. kojima;N. Mori;J. Shirakashi;and N. Koshida
交替沉积的薄固体薄膜的演示使用纳米晶硅弹道电子发射器。发射的弹道热电子撞击位于发射极附近的涂有CuCl 2溶液的Si衬底。从光谱表征表明，薄铜膜沉积到目标基板上，没有污染。发射的能量为5-7 eV的弹道热电子在溶液中的穿透深度内促进Cu 2+离子的优先还原，随后形成用于薄膜生长的成核。所提出的印刷方案也可用于氧化的Si衬底。直接还原模型分别通过对弹道电子还原活性的循环伏安分析得到支持。
Alternative deposition of thin solid films is demonstrated using a nanocrystalline silicon ballistic electron emitter. Emitted ballistic hot electrons impinge upon a CuCl 2-solution-coated Si substrate that is located in proximity close to the emitter. It is shown from spectroscopic characterizations that thin Cu films are deposited onto the target substrate with no contaminations. As-emitted ballistic hot electrons with energies of 5–7 eV promote preferential reduction of Cu 2+ ions within the penetration depth in the solution followed by the nuclei formation for growth of thin film. The presented printing scheme is also available for oxidized Si substrates. The direct reduction model is supported separately by cyclic voltammetry analyses on the reducing activity of ballistic electrons.