Polarization of the output of InGaAsP semiconductor diode lasers
Polarization of the output of InGaAsP semiconductor diode lasers
复制标题
InGaAsP 半导体二极管激光器输出的偏振
DOI：
10.1109/3.29241
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发表时间：
1989
影响因子：
2.5
通讯作者：
C. Adams
中科院分区：
文献类型：
--
作者：
D. Cassidy;C. Adams
本文讨论了1.3微米InGaAsP半导体半导体激光器输出偏振度(Rho)随电流的测量。结果表明，远低于临界值的Rho(Rho/subb/)比临界值附近或高于临界值的Rho更能反映活跃区的机械应变。Rho/subb/几乎不依赖于驱动电平、模式反射率、阈值或增益饱和。发现了Rho/subb/的大小与器件操作特性之间的可能相关性。要证实这种可能性，还需要做更多的工作。给出了TE模和TM模反射率差大小的实验证据。>；
Measurements of the degree of polarization ( rho ) of the output of 1.3- mu m InGaAsP semiconductor diode lasers as a function of current are discussed. It is found that rho measured for well below threshold ( rho /sub b/) is a better indicator of mechanical strain in the active region than rho measured near or above threshold. rho /sub b/ exhibits little dependence on drive level, mode reflectivity, threshold, or saturation of the gain. A possible correlation between the magnitude of rho /sub b/ and device operating characteristics was found. More work is required to confirm this possibility. Data which provide experimental evidence for the magnitude of the difference between the reflectivities of the TE and TM modes are presented. >