Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers
Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers
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DOI：
10.1109/jqe.2002.802165
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发表时间：
2002-11
影响因子：
2.5
通讯作者：
J. Oh;J. Campbell;Shawn G. Thomas;S. Bharatan;R. Thoma;C. Jasper;Robert E. Jones;T. Zirkle
中科院分区：
文献类型：
--
作者：
J. Oh;J. Campbell;Shawn G. Thomas;S. Bharatan;R. Thoma;C. Jasper;Robert E. Jones;T. Zirkle
我们报道了一种叉指型p-i-n光电探测器，它是在Si衬底上生长的1-/spl μ/m厚的Ge外延层上，使用10-/spl μ/m厚的渐变SiGe缓冲层制作的。使用低能等离子体增强化学气相沉积实现了45 /spl Aring//s/spl sim/60 /spl Aring//s的生长速率。Ge外延层的穿透位错密度为10/sup 5/ cm/sup-2/，均方根表面粗糙度为3.28nm。在具有1-/spl μ/m指宽和2-/spl μ/m间距的光电探测器上测量了3-dB带宽和外量子效率，该光电探测器具有25/spl × 28 /spl μ/m/sup 2/有源面积。在波长为1.3 /spl mu/m时，在偏置电压为-1 V、-3 V和-5 V时，带宽分别为2.2 GHz、3.5 GHz和3.8 GHz。暗电流在-3 V和-5 V下分别为3.2和5.0 /spl mu/A。该光电探测器在1.3 μ m/s波长下的外量子效率为49%。
We report an interdigitated p-i-n photodetector fabricated on a 1-/spl mu/m-thick Ge epitaxial layer grown on a Si substrate using a 10-/spl mu/m-thick graded SiGe buffer layer. A growth rate of 45 /spl Aring//s/spl sim/60 /spl Aring//s was achieved using low-energy plasma enhanced chemical vapor deposition. The Ge epitaxial layer had a threading dislocation density of 10/sup 5/ cm/sup -2/ and a rms surface roughness of 3.28 nm. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-/spl mu/m finger width and 2-/spl mu/m spacing with a 25/spl times/28 /spl mu/m/sup 2/ active area. At a wavelength of 1.3 /spl mu/m, the bandwidth was 2.2, 3.5, and 3.8 GHz at bias voltages of -1, -3, and -5 V, respectively. The dark current was 3.2 and 5.0 /spl mu/A at -3 and -5 V, respectively. This photodetector exhibited an external quantum efficiency of 49% at a wavelength of 1.3 /spl mu/m.