High-Rate Selective Etching of a-Si:H Using Hydrogen Radicals
High-Rate Selective Etching of a-Si:H Using Hydrogen Radicals
复制标题
使用氢自由基对 a-Si:H 进行高速选择性蚀刻
DOI：
10.1143/jjap.33.l621
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发表时间：
1994
影响因子：
1.5
通讯作者：
T. Tarui
中科院分区：
文献类型：
--
作者：
H. Nagayoshi;M. Yamaguchi;K. Kamisako;T. Tarui
提出了一种利用氢自由基对氢化非晶硅（A - si:H）进行高速率选择性刻蚀的方法。采用微波氢余辉法在50°C下获得2.7µm/min的高蚀刻速率。而非晶态氮化硅（a-SiN1.2:H）、氧化硅（SiO2）、碳化硅（a-SiC0.5:H）和Al薄膜在相同的条件下没有蚀刻。这些结果表明，利用氢自由基可以实现a-Si:H的高速率选择性蚀刻。该方法适用于制造大面积器件。
A high-rate selective etching method of hydrogenated amorphous silicon (a-Si:H) using hydrogen radicals is presented. A very high etch rate of 2.7 µm/min was obtained at 50°C using a microwave hydrogen afterglow method. However, amorphous silicon nitride ( a-SiN1.2:H), silicon oxide ( SiO2), silicon carbide ( a-SiC0.5:H), and Al films were not etched under the same conditions. These results suggest that high-rate selective etching of a-Si:H can be achieved using hydrogen radicals. This method is suitable for the fabrication of large-area devices.