Conductive Path Mechanism for Bipolar Resistive Switching Characteristics in Lead-Free Perovskite CsSnBr3-Based Nonvolatile Memories
Conductive Path Mechanism for Bipolar Resistive Switching Characteristics in Lead-Free Perovskite CsSnBr3-Based Nonvolatile Memories
复制标题
无铅钙钛矿 CsSnBr3 基非易失性存储器中双极电阻开关特性的导电路径机制
DOI：
10.1002/pssa.202100501
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发表时间：
2021-09-24
影响因子：
2
通讯作者：
Zhu, Yuanyuan
中科院分区：
文献类型：
--
作者：
Wang, Hongjun;Wei, Hong;Zhu, Yuanyuan
Halide perovskites are intensely studied due to their potential excellent properties in electronic devices. However, the toxicity of lead remains as an obstacle on their way toward large-scale applications. Herein, the lead-free all-inorganic perovskite CsSnBr3 film is used as the switching layer to construct nonvolatile resistive switching (RS) memories and the underlying switching mechanism is systematically explicated. Both memories with Ag/CsSnBr3/Pt and Pt/CsSnBr3/Pt structures exhibit reproducible bipolar RS characteristics, including the large on/off ratios and low reset currents. The RS characteristics are attributed to the formation/rupture of nano-cone-shaped conductive paths under external voltage bias. In addition, compared with Pt/CsSnBr3/Pt device, the Ag/CsSnBr3/Pt device manifests lower operation set/reset voltages, revealing the formation of higher density or stronger conductive paths. This work might pave the way for the lead-free all-inorganic perovskite-based RS memory devices in high performance emerging commercial applications.
