Multiregion DCIV: A Sensitive Tool for Characterizing the $\hbox{Si/SiO}_{2}$ Interfaces in LDMOSFETs
Multiregion DCIV: A Sensitive Tool for Characterizing the $\hbox{Si/SiO}_{2}$ Interfaces in LDMOSFETs
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DOI：
10.1109/led.2012.2208730
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发表时间：
2012-10
影响因子：
4.9
通讯作者：
Yandong He;Ganggang Zhang;Lin Han;Xing Zhang
中科院分区：
文献类型：
--
作者：
Yandong He;Ganggang Zhang;Lin Han;Xing Zhang
通过测量源/漏-衬底结正向偏压下的衬底电流，采用多区直流电流-电压（MR-DCIV）技术表征了浅沟槽隔离（STI）横向扩散金属氧化物半导体器件中界面陷阱的密度和位置. LDMOSFET中的界面陷阱在MR-DCIV电流谱中产生了清晰的尖峰。利用该无损测试工具可以在不损伤栅氧化层的情况下测量STI区的界面陷阱。这种技术不仅可以提供跨晶片生长界面陷阱的轮廓，但也应力引起的缺陷信息。
By measuring the substrate current under the forward bias of source/drain-substrate junction, a multiregion direct current current-voltage (MR-DCIV) technique is used to characterize the interface trap density and location in shallow-trench-isolation (STI)-based laterally diffused metal-oxide-semiconductor devices. The interface traps in LDMOSFETs yielded sharp well-resolved peaks in MR-DCIV current spectra. The interface traps in STI region can be measured without inducing any potential damages on the gate oxide by this nondestructive characterization tool. This technique can provide not only across-wafer as-grown interface trap profile but also stress-induced defect information.