A single-stage cryogenic LNA with low power consumption using a commercial SiGe HBT
A single-stage cryogenic LNA with low power consumption using a commercial SiGe HBT
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使用商用 SiGe HBT 的低功耗单级低温 LNA
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
P. Mauskopf
中科院分区：
文献类型：
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作者：
H. Mani;P. Mauskopf
一种低温冷却的低噪声放大器（LNA）已经在亚利桑那州立大学天文仪器实验室设计、制造并进行了测试。LNA采用低成本、现成的市售低噪声SiGe异质结双极晶体管（HBT），采用单级表面贴装封装。在校准的噪声/增益/ s参数设置中测量了所构建的LNA，数据显示LNA在100MHz-1GHz频段的噪声温度低至5K（或约0.074dB噪声系数），增益超过20dB。LNA的输入和输出匹配到50欧姆，在大多数频率下测量到的S11和S22小于-10dB。所有这些参数都是在不同的晶体管偏置点和功耗下测量的。在500MHz时，放大器的功耗低至0.7mW，噪声为8K（或约0.12dB噪声系数），增益为20dB。该放大器以极低的成本和极短的开发时间提供了良好的性能，可用于各种低温物理实验。
A cryogenically cooled low noise amplifier (LNA) has been designed, built and tested at the Astronomy Instrumentation Laboratory at Arizona State University. The LNA uses low cost, off the shelf commercially available low noise SiGe hetero junction bipolar transistor (HBT) in a single stage surface mount package. The built LNA has been measured in a calibrated noise/gain/S-parameters setup and the data shows the LNA has a noise temperature of as low as 5K (or about 0.074dB noise figure) and more than 20dB of Gain on the 100MHz-1GHz band. The input and output of the LNA are matched to 50 Ohm, an S11 and S22 of less than -10dB at most frequencies have been measured. All these parameters were measured at different transistor bias points and power dissipations. The amplifier was operated at as low as 0.7mW power dissipation with a measured 8K of noise (or about 0.12dB Noise figure) and 20dB of Gain at 500MHz. The developed amplifier offered good performance at an extremely low cost and with a very short development time, this amplifier can be useful to a variety low temperature physics experiments.