High-Tc and high-Jc SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy
High-Tc and high-Jc SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy
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DOI：
10.1063/1.3664632
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发表时间：
2011-12-05
影响因子：
4
通讯作者：
Naito, Michio
中科院分区：
文献类型：
--
作者：
Ueda, Shinya;Takeda, Soichiro;Naito, Michio
用分子束外延法在氟化物衬底上制备了SmFeAs（O，F）超导薄膜。在我们的过程中，无F的SmFeAsO薄膜生长的第一，和F随后被引入到膜的扩散从SmF 3的覆盖层。通过这种简单的工艺，在CaF 2上的膜中获得了创纪录的高T-c，即T-c（on）（T-c（end））-57.8K（56.4K）。在5 K的自电场中，CaF 2薄膜的临界电流密度超过1 MA/cm（2）。讨论了SmFeAs（O，F）薄膜的超导电性与外延应变的关系。(C)2011年美国物理学会。[doi：10.1063/1.3664632]
Superconducting thin films of SmFeAs(O,F) were prepared by molecular beam epitaxy on fluoride substrates. In our process, F-free SmFeAsO films were grown first, and F was subsequently introduced to the films by diffusion from an overlayer of SmF3. By this simple process, record high T-c, namely, T-c(on) (T-c(end)) - 57.8 K (56.4 K) was obtained in a film on CaF2. Furthermore, the films on CaF2 showed high critical current density over 1 MA/cm(2) in the self-field at 5 K. The correlation between superconductivity and epitaxial strain in SmFeAs(O,F) films is discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3664632]