Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices
Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices
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DOI：
10.1063/1.3462932
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发表时间：
2010-07
影响因子：
4
通讯作者：
P. Gammon;A. Pérez‐Tomás;M. Jennings;O. Guy;N. Rimmer;J. Llobet;N. Mestres;P. Godignon;M. Placidi;M. Zabala;J. Covington;P. Mawby
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文献类型：
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作者：
P. Gammon;A. Pérez‐Tomás;M. Jennings;O. Guy;N. Rimmer;J. Llobet;N. Mestres;P. Godignon;M. Placidi;M. Zabala;J. Covington;P. Mawby
在本文中，我们提出了一种通过使用薄晶片键合的Si异质结层将HfO 2集成到SiC栅极架构中的方法。已制作并进行了电学测试，电容器由HfO 2在Si上，SiC，Si/SiC，和SiO2/SiC。HfO 2/Si/SiC电容器通过在两种宽带隙材料之间引入窄带隙半导体，使泄漏最小化，击穿电场为3.5 MV/cm。使用透射电子显微镜、能量色散X射线和拉曼分析来分析Si/SiC异质结，证明界面没有污染物并且Si层保持无应力。
In this paper we present a method for integrating HfO2 into the SiC gate architecture, through the use of a thin wafer bonded Si heterojunction layer. Capacitors consisting of HfO2 on Si, SiC, Si/SiC, and SiO2/SiC have been fabricated and electrically tested. The HfO2/Si/SiC capacitors minimize leakage, with a breakdown electric field of 3.5 MV/cm through the introduction of a narrow band gap semiconductor between the two wide band gap materials. The Si/SiC heterojunction was analyzed using transmission electron microscopy, energy dispersive x-ray, and Raman analysis, proving that the interface is free of contaminants and that the Si layer remains unstressed.