Overcoming the doping bottleneck in semiconductors
Overcoming the doping bottleneck in semiconductors
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DOI：
10.1016/j.commatsci.2004.02.024
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发表时间：
2004-08-01
影响因子：
3.3
通讯作者：
Wei, SH
中科院分区：
文献类型：
--
作者：
Wei, SH
半导体作为电子和光电器件的应用关键取决于它们的掺杂性。未能对材料进行掺杂，即，产生超过一定限度的足够的自由电荷载流子通常是推进基于半导体的高技术的最重要的瓶颈。利用第一性原理能带结构方法，我们系统地研究了半导体中缺陷形成和电离的一般化学趋势，以理解掺杂困难的物理根源。已经开发了克服掺杂限制的新方法。本文回顾了我们最近的进展，并讨论了一些计算问题的缺陷计算。(C)2004 Elsevier B.V.保留所有权利。
Application of semiconductors as electric and optoelectronic devices depends critically on their dopability. Failure to dope a material, i.e., to produce enough free charge carriers beyond a certain limit, is often the single most important bottleneck for advancing semiconductor-based high technology. Using the first-principles band structure method, we have studied systematically the general chemical trends of the defect formation and ionization in semiconductors to understand the physical origin of the doping difficulty. New approaches to overcoming the doping limit have been developed. This paper reviews our recent progress and discusses some of the computational issues in defect calculations. (C) 2004 Elsevier B.V. All rights reserved.