GaNAs as Strain Compensating Layer for 1.55 µm Light Emission from InAs Quantum Dots
GaNAs as Strain Compensating Layer for 1.55 µm Light Emission from InAs Quantum Dots
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GaN 作为 InAs 量子点 1.55 µm 光发射的应变补偿层
DOI：
10.1143/jjap.42.5598
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Seong
中科院分区：
文献类型：
--
作者：
S. Ganapathy;Xi Zhang;I. Suemune;K. Uesugi;H. Kumano;B. J. Kim;T. Seong
GaNAs应变补偿层（SCL）被应用于掩埋生长在GaAs衬底上的InAs量子点（QD）。其主要思想是用GaNAs超临界激光器中的张应变来补偿InAs量子点引起的压应变，以保持系统的总应变最小。GaNAs SCL的应用导致InAs量子点的光致发光（PL）峰随着GaNAs中的氮（N）组分的增加而系统地向较长波长移动，并且在GaNAs SCL中的N组分为2.7%时，InAs量子点已经实现了1.55 μm波长的发光。这一结果是有希望的应用GaNAs SCL的InAs-QD为基础的长波长光源的光纤通信系统。
GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 µm has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.