Mott-Hubbard transition versus anderson localization in correlated electron systems with disorder
Mott-Hubbard transition versus anderson localization in correlated electron systems with disorder
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DOI：
10.1103/physrevlett.94.056404
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发表时间：
2005-02-11
影响因子：
8.6
通讯作者：
Vollhardt, D
中科院分区：
文献类型：
--
作者：
Byczuk, K;Hofstetter, W;Vollhardt, D
在动力学平均场理论中，利用几何平均（“典型”）局域态密度计算了相关无序电子系统的相图。相关的金属，莫特绝缘体，和安德森绝缘体相，以及共存和交叉制度，被确定。莫特绝缘子和安德森绝缘子是连续连接的。
The phase diagram of correlated, disordered electron systems is calculated within dynamical mean-field theory using the geometrically averaged ("typical") local density of states. Correlated metal, Mott insulator, and Anderson insulator phases, as well as coexistence and crossover regimes, are identified. The Mott and Anderson insulators are found to be continuously connected.