Graphene based electron field emitter

Graphene based electron field emitter
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DOI：
10.1116/1.4905937
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发表时间：
2015-01
期刊：
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
影响因子：
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通讯作者：
C. Wenger;J. Kitzmann;A. Wolff;M. Fraschke;C. Walczyk;G. Lupina;W. Mehr;Marcel Junige;M. Albert;J. Bartha
C. Wenger;J. Kitzmann;A. Wolff;M. Fraschke;C. Walczyk;G. Lupina;W. Mehr;Marcel Junige;M. Albert;J. Bartha
中科院分区：
其他
文献类型：
--
作者：
C. Wenger;J. Kitzmann;A. Wolff;M. Fraschke;C. Walczyk;G. Lupina;W. Mehr;Marcel Junige;M. Albert;J. Bartha

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制备了由锥形硅尖、薄Al2O3隧道势垒和石墨烯顶电极组成的石墨烯基电子场发射体阵列。由于单层石墨烯顶部电极，电子能够隧穿Al2O3层并发射到真空中。隧道漏电流以及发射电流的温度行为的特点。
Graphene based electron field emitter arrays consisting of cone-shaped silicon tips, a thin Al2O3 tunnel barrier, and graphene top electrode are fabricated. Due to the monolayered graphene top electrode, the electrons are able to tunnel through the Al2O3 layer and emit into the vacuum. The temperature behavior of the tunnel leakage current as well as the emission current is characterized.