Suppressed pinning field of a trapped domain wall due to direct current injection
Suppressed pinning field of a trapped domain wall due to direct current injection
复制标题
由于直流注入而抑制俘获畴壁的钉扎场
DOI：
10.1063/1.1618941
复制
发表时间：
2003
影响因子：
3.2
通讯作者：
Y. Aoyagi
中科院分区：
文献类型：
--
作者：
T. Kimura;Y. Otani;I. Yagi;K. Tsukagoshi;Y. Aoyagi
We investigate the influence of the dc current injection on trapped domain walls in magnetic nanostructures designed for high precision anisotropy magnetoresistance measurements. The results obtained for a simple strip with no trapped domain wall are compared with those for the strip with the trapped domain wall. The depinning field of the domain wall decreases significantly when the electron current is applied along the direction of the domain wall propagation. On the other hand, the switching field only shows a small reduction when the electron current is opposed to the domain wall propagation. The origin of this behavior can be explained by considering Joule heat as well as an additional pressure exerted on the domain wall due to the transfer of the spin angular momentum from the spin-polarized current to the local magnetic moment.
