Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect
Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect
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DOI：
10.1063/1.4992142
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发表时间：
2017-09-11
影响因子：
4
通讯作者：
Zhang, Weifeng
中科院分区：
文献类型：
--
作者：
Jia, Caihong;Yin, Xiaoqian;Zhang, Weifeng
用脉冲激光沉积法在a面Al_2 O_3上生长了BaTiO_3/ZnO异质结。BTO/ZnO/Al_2 O_3的面外和面内外延关系分别为（100）BTO//（0002）ZnO//（11（2）over bar_0）Al_2 O_3和[011]（BTO）//[2（1）over bar_0]（ZnO）//[0001] Al_2 O_3。BaTiO_3薄膜中存在三畴外延生长模式，而ZnO薄膜在α-Al_2 O_3上为单畴外延生长。整流效果观察到的BTO薄膜生长在高激光能量为450和320 mJ，而双极电阻开关被发现为那些生长在低激光能量为280和200 mJ的BTO薄膜。从整流效应到双极阻变效应的转变可以通过界面态密度的变化来理解。出版社：AIP Publishing
Epitaxial BaTiO3/ZnO heterojunctions have been grown on a-plane Al2O3 by pulsed laser deposition. The out-of-plane and in-plane epitaxial relationships of BTO/ZnO/Al2O3 are determined to be (100)BTO//(0002)ZnO//(11 (2) over bar0) Al2O3 and [011](BTO)//[2 (1) over bar(1) over bar0](ZnO)//[0001]Al2O3, respectively. A threedomain- epitaxy growth mode was found to coexist in BaTiO3 films, while ZnO was a single domain epitaxially grown on a-Al2O3. A rectification effect was observed for the BTO films grown at high laser energies of 450 and 320 mJ, while bipolar resistive switching was found for those BTO films grown at low laser energies of 280 and 200 mJ. The transition from the rectification effect to the bipolar resistive switching effect can be understood by the variance of interface state density. Published by AIP Publishing.