A double quantum dot defined by top gates in a single crystalline InSb nanosheet*
A double quantum dot defined by top gates in a single crystalline InSb nanosheet*
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由单晶 InSb 纳米片中的顶栅定义的双量子点
DOI：
10.1088/1674-1056/abff2e
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发表时间：
2021-12-01
影响因子：
1.7
通讯作者：
Xu, Hong-Qi
中科院分区：
文献类型：
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作者：
Chen, Yuanjie;Huang, Shaoyun;Xu, Hong-Qi
我们报告的双量子点（DQD）设备的独立，单晶InSb纳米片的输运研究。通过分子束外延生长独立的纳米片，并通过顶栅技术定义DQD。通过输运测量，我们演示了如何在InSb纳米片中通过调节施加到顶栅的电压来定义单个量子点（QD）和DQD。我们还测量了DQD的电荷稳定性图，并表明在DQD中的两个单独的量子点之间的电荷状态和点间耦合可以有效地调节的顶栅。对DQD中的电势分布和电荷密度分布进行了数值模拟，结果支持了实验结果，并为InSb纳米片中DQD的制备和输运特性提供了更好的理解。在二维InSb纳米片中实现的DQD在横向缩放方面具有显着的优势，因此可以作为量子计算和量子模拟技术发展的新构建块。
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by the top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for the developments of quantum computation and quantum simulation technologies.