Photoluminescent properties of Er‐doped In1−xGaxP prepared by metalorganic vapor phase epitaxy
Photoluminescent properties of Er‐doped In1−xGaxP prepared by metalorganic vapor phase epitaxy
复制标题
金属有机气相外延制备掺铒In1−xGaxP的光致发光性能
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
B. Wessels
中科院分区：
文献类型：
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作者：
A. J. Neuhalfen;B. Wessels
大气压金属有机物气相外延已被用于使用Er β-二酮酸盐前体作为掺杂剂源来制备Er掺杂的In 1 −xGaxP层。研究了温度依赖性光致发光特性随x=0-0.98的合金组成的变化。所有Er掺杂的In 1 −xGaxP层在0.801 eV处都表现出强烈的特征Er 3 + 4f-壳层内光致发光发射，这与合金成分无关。观察到Er 3+相关发射的热淬灭，并且取决于合金成分。对于x ≥ 0.2的In 1 −xGaxP合金，在295 K下观察到Er 3+相关的发光。
Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er‐doped In1−xGaxP layers using an Er beta‐diketonate precursor as the dopant source. Temperature‐dependent photoluminescent properties were studied as a function of alloy composition for x=0–0.98. All the Er‐doped In1−xGaxP layers exhibited strong characteristic Er3+ intra‐4f‐shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er3+‐related emission was observed and depended on the alloy composition. For In1−xGaxP alloys with x≳0.2, Er3+‐related luminescence is observed at 295 K.