Analysis of inductively coupled argon plasma-enhanced quantum-well intermixing process for multiple bandgap implementation

Analysis of inductively coupled argon plasma-enhanced quantum-well intermixing process for multiple bandgap implementation
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DOI:
10.1016/j.jcrysgro.2005.12.037
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发表时间:
2006-02
影响因子:
1.8
通讯作者:
D. Nie;T. Mei;H. Djie;M. Chin;X. Tang;Y. Wang
D. Nie;T. Mei;H. Djie;M. Chin;X. Tang;Y. Wang
中科院分区:
材料科学3区
文献类型:
--
作者:
D. Nie;T. Mei;H. Djie;M. Chin;X. Tang;Y. Wang

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