A metal oxide TFT gate driver with a single negative power source employing a boosting module
A metal oxide TFT gate driver with a single negative power source employing a boosting module
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DOI：
10.1080/15980316.2019.1689190
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发表时间：
2020-01
影响因子：
3.7
通讯作者：
Yan-Gang Xu;Jun-Wei Chen;Wen-Xing Xu;Lei Zhou;Weijing Wu;J. Zou;Miao Xu;L. Wang;Junbiao Peng
中科院分区：
文献类型：
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作者：
Yan-Gang Xu;Jun-Wei Chen;Wen-Xing Xu;Lei Zhou;Weijing Wu;J. Zou;Miao Xu;L. Wang;Junbiao Peng
本文提出了一种新型的栅驱动器，该驱动器由具有蚀刻停止层（ESL）结构的In-Zn-O薄膜晶体管（IZO TFT）集成而成。升压模块仅由VIN信号控制，以产生低于VSS的电平。提出的栅极驱动器与15个阶段，通过IZO TFT工艺在玻璃基板上制作，以验证其功能。实验结果表明，在16.7和66.7 kHz时钟频率下，该栅极驱动器在阻性负载RL=2 kΩ、容性负载CL=30 pF时，均能成功输出全摆幅波形，且输出脉宽为3.2 μs，失真小，稳定性好。
This paper presents a new gate driver integrated by In-Zn-O thin-film transistors (IZO TFTs) with the etch stop layer (ESL) structure, in which only a single negative power source is used on account of a new boosting module. The boosting module is controlled only by the VIN signal for generating a lower level than VSS. The proposed gate driver with 15 stages is fabricated through the IZO TFT process on a glass substrate to verify its function. The experiment results showed that the proposed gate driver can successfully output full-swing waveforms with resistive load RL=2 kΩ and capacitive load CL=30 pF at the 16.7 and 66.7 kHz clock frequencies, and can also output as small as 3.2 μs pulse width with little distortion, revealing good stability.