Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)
Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)
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DOI：
10.1063/1.4791580
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发表时间：
2013-02-04
影响因子：
4
通讯作者：
Gallagher, B. L.
中科院分区：
文献类型：
--
作者：
Howells, B.;Wang, M.;Gallagher, B. L.
我们证明了四元稀释铁磁半导体Ga0.94Mn0.06As0.9Sb0.1的各向异性磁电阻（AMR）与电流方向相对于晶轴有很强的依赖性。在沿[1 (1)over bar0]和[110]晶体方向的电流中分别观察到主要的立方对称性和单轴对称性。此外，还观察到磁共振的对称性和大小对温度的异常依赖。现象学分析揭示了交叉立方晶/非晶项的重要贡献，它比以前在（Ga, Mn） As薄膜中观察到的要大得多。讨论了提高这一术语的可能原因。(C) 2013年美国物理研究所。[http://dx.doi.org/10.1063/1.4791580]
We demonstrate a strong dependence of the anisotropic magnetoresistance (AMR) on the direction of current with respect to the crystalline axes in the quaternary diluted ferromagnetic semiconductor Ga0.94Mn0.06As0.9Sb0.1. Dominant cubic and uniaxial symmetries are observed for current along the [1 (1) over bar0] and [110] crystalline directions, respectively. In addition, an anomalous temperature dependence of the symmetry and magnitude of the AMR is observed. Phenomenological analysis reveals an important contribution of a crossed cubic crystalline/non-crystalline term, which is much larger than previously observed in (Ga, Mn) As films. Possible reasons for the enhancement of this term are discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791580]