Oxygen incorporation into GST phase-change memory matrix
Oxygen incorporation into GST phase-change memory matrix
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DOI：
10.1016/j.apsusc.2015.01.203
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发表时间：
2015-03-30
影响因子：
6.7
通讯作者：
Jain, H.
中科院分区：
文献类型：
--
作者：
Golovchak, R.;Choi, Y. G.;Jain, H.
在不同的深度尺度下，研究了GST-225薄膜与氧反应引起的非晶和晶化的结构变化。用低能离子散射（LEIS）技术研究了最顶部表面层与氧的相互作用机制，而用高分辨率X射线光电子能谱（XPS）研究了下面表面层中的化学修饰。通过显微拉曼光谱的变化，其特征在于通过整个膜厚度的平均。氧暴露导致GST-225膜表面的Te耗尽并形成锑和锗的氧化物。锑氧化物复合物被发现在整个厚度的薄膜后，在空气中长时间的存储，而没有证据表明形成纯GeO 2相的薄膜的体积通过拉曼光谱。另外，在氧气气氛中在300 ℃下GST-225膜的结晶过程中，通过LEIS分布观察到在类似于10 nm的表面层内形成富Ge相的趋势。(C)2015爱思唯尔B. V.保留所有权利。
Structural changes in amorphous and crystallized GST-225 films induced by the reaction with oxygen are studied at different depth scales. The mechanism of interaction of the very top surface layers with oxygen is studied with low-energy ion scattering (LEIS) technique, while the modifications of chemistry in the underlying surface layers are investigated with high-resolution X-ray photoelectron spectroscopy (XPS). The changes averaged through the overall film thickness are characterized by micro-Raman spectroscopy. The oxygen exposure leads to a depletion of GST-225 film surfaces in Te and formation of the antimony and germanium oxides. The antimony oxide complexes are found throughout the whole thickness of the films after their prolonged storage in air, whereas no evidence for formation of pure GeO2 phase is found in the volume of the films through Raman spectroscopy. A tendency to form Ge-rich phase within the similar to 10 nm surface layer is additionally observed by LEIS profiling during crystallization of GST-225 film at 300 degrees C in oxygen atmosphere. (C) 2015 Elsevier B.V. All rights reserved.