Moving mask UV lithography for three-dimensional structuring
Moving mask UV lithography for three-dimensional structuring
复制标题
DOI：
10.1088/0960-1317/17/2/003
复制
发表时间：
2007-02
影响因子：
2.3
通讯作者：
Y. Hirai;Y. Inamoto;K. Sugano;T. Tsuchiya;O. Tabata
中科院分区：
文献类型：
--
作者：
Y. Hirai;Y. Inamoto;K. Sugano;T. Tsuchiya;O. Tabata
本文系统地研究了一种用于厚层光刻胶的新型3D(3D)UV(UV)光刻设备，并对3D微结构的UV光刻过程进行了模拟。为了实现多种多样的三维微结构，研制的接近式三维紫外光刻机采用了作者首次提出的用于深X射线光刻的移动掩模光刻概念。此外，作者还提出了一种新的实用的光刻胶轮廓模拟方法，该方法采用“快速行进法”来考虑显影过程中的光刻胶溶解矢量。一系列使用正色调光刻胶(50微米厚)的移动掩模UV光刻实验成功地证实了(1)移动掩模UV曝光技术用于3D微结构的能力和(2)所提出的光刻胶轮廓模拟的有效性。
This paper presents a systematic study on a novel 3D (three-dimensional) UV (ultraviolet) lithography apparatus for thick photoresist and a UV lithography process simulation for 3D microstructuring. In order to realize a wide variety of 3D microstructures, the developed proximity 3D UV lithography apparatus adopts the ‘moving mask lithography’ concept which was originally proposed by the authors for deep x-ray lithography. Furthermore, the authors propose a new practical photoresist profile simulation approach adopting the ‘fast marching method’ to consider the photoresist dissolution vector in the development process. A series of moving mask UV lithography experiments using a positive-tone photoresist (50 µm thickness) successfully confirmed (1) the capability of the moving mask UV exposure technique for 3D microstructuring and (2) the validity of the proposed photoresist profile simulation.